Next Page »

Soon we’ll be able to store terabytes worth of data on our smartphones

July 28th, 2014

HITC Tech http://bit.ly/1rvK8l4 http://hereisthecity.com/en-gb/2014/07/25/soon-well-be-able-to-store-terabytes-worth-of-data-on-our-smartp/

New, super dense memory chips may arrive soon

July 28th, 2014

Myce (This article also appeared in TweakTown.) http://bit.ly/1pmk3Fj http://www.myce.com/news/new-super-dense-memory-chips-may-arrive-soon-72279/

Weekend tech reading: Oculus Rift DK2 and OS X Yosemite previewed, Destiny compared on PS4/XO

July 28th, 2014

TechSpot http://bit.ly/1tT74fB http://www.techspot.com/news/57544-weekend-tech-reading-oculus-rift-dk2-os-x-yosemite-previewed-destiny-compared-on-ps4-xo.html

The morning download: Hilton upgrades to mobile-first

July 28th, 2014

Rice’s silicon oxide technology can now be used to fabricate devices with conventional production methods, which brings it a step closer to mass production. James Tour, the T.T. and W.F. Chao Chair in Chemistry and professor of mechanical engineering and materials science and of computer science, is quoted. Wall Street Journal http://on.wsj.com/1pvOwhb http://blogs.wsj.com/cio/2014/07/28/the-morning-download-hilton-upgrades-to-mobile-first/

Tech universe: July 17, 2014

July 17th, 2014

New Zealand Herald http://bit.ly/1tVRROt http://www.nzherald.co.nz/technology/news/article.cfm?c_id=5&objectid=11294878

Nanoporous oxide makes good memory device

July 17th, 2014

Rice’s silicon oxide technology can now be used to fabricate devices with conventional production methods, which brings it a step closer to mass production. James Tour, the T.T. and W.F. Chao Chair in Chemistry and professor of mechanical engineering and materials science and of computer science, is quoted. Nanotechweb.org http://bit.ly/1nAni7M http://nanotechweb.org/cws/article/tech/57925

Nanoporous silicon oxide is back in the race for resistive memory

July 16th, 2014

Rice’s silicon oxide technology can now be used to fabricate devices with conventional production methods, which brings it a step closer to mass production. James Tour, the T.T. and W.F. Chao Chair in Chemistry and professor of mechanical engineering and materials science and of computer science, is quoted. IEEE Spectrum http://bit.ly/1rr1r7G http://spectrum.ieee.org/nanoclast/semiconductors/memory/nanoporous-version-of-silicon-oxide-brings-it-back-into-the-race-for-resistive-memory

Potential replacement for flash memory gets a boost

July 14th, 2014

Rice researchers have improved the use of Resistive Random Access Memory to replace flash memory. Overclockers Club http://bit.ly/1zFzIVH http://www.overclockersclub.com/news/36578/

Rice employs nanoporous silicon-oxide material in new RRAM memory devices

July 11th, 2014

Rice’s silicon oxide technology can now be used to fabricate devices with conventional production methods, which brings it a step closer to mass production. James Tour, the T.T. and W.F. Chao Chair in Chemistry and professor of mechanical engineering and materials science and of computer science, is quoted. AZonano.com (This article also appeared in HardOCP, […]

Rice’s silicon oxide memories catch manufacturers’ eye-Rice News

July 10th, 2014

Rice University’s breakthrough silicon oxide technology for high-density, next-generation computer memory is one step closer to mass production, thanks to a refinement that will allow manufacturers to fabricate devices at room temperature with conventional production methods. http://bit.ly/1nhWTQE http://news.rice.edu/2014/07/10/rices-silicon-oxide-memories-catch-manufacturers-eye/

Next Page »