Nanoporous silicon oxide is back in the race for resistive memory

July 16th, 2014

Rice’s silicon oxide technology can now be used to fabricate devices with conventional production methods, which brings it a step closer to mass production. James Tour, the T.T. and W.F. Chao Chair in Chemistry and professor of mechanical engineering and materials science and of computer science, is quoted.
IEEE Spectrum
http://bit.ly/1rr1r7G
http://spectrum.ieee.org/nanoclast/semiconductors/memory/nanoporous-version-of-silicon-oxide-brings-it-back-into-the-race-for-resistive-memory

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